ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES.

I. Ohdomari*, King-Ning Tu, W. Hammer

*Corresponding author for this work

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study, four kinds of processing have been used to modify Pd//2Si-silicon interfaces by ion implantation. The electrical properties and reaction kinetics of the interfaces have been examined by current-voltage measurements and high energy ion backscattering spectroscopy. Preliminary results are reported and discussed.

原文English
頁(從 - 到)1-5
頁數5
期刊Radiation effects
49
發行號1-3
DOIs
出版狀態Published - 1 一月 1978
事件Proc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung
持續時間: 4 九月 19788 九月 1978

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