Investigations of organic light emitting diodes with CdSe(ZnS) quantum dots

C. W. Lee, C. H. Chou, J. H. Huang, Chain-Shu Hsu, T. P. Nguyen*

*Corresponding author for this work

研究成果: Article同行評審

44 引文 斯高帕斯(Scopus)

摘要

In this study, we report results on investigation of bilayer light emitting diodes made of organic capped CdSe(ZnS) core/shell type nanocrystals and poly[2-phenyl-3-(9,9-dihexyl-fluoren-2-yl) phenylene vinylene]-co-[2-methoxy-5-(2′-ethylhexyloxy) phenylene vinylene] (FP-PPV-co-MEH-PPV) electroluminescent co-polymer. Light emitting diodes of structure: indium-tin-oxide (ITO)/polyethylene dioxythiophene: polystyrene sulfonate (PEDOT:PSS)/FP-PPV-co-MEH-PPV/Ca/Al devices have been fabricated and studied. The co-polymer device emits a yellow light with a maximum brightness of 3949 cd/m2 and a maximum external quantum efficiency of 0.27 cd/A at 10 V. Incorporation of CdSe(ZnS) quantum dots into the active polymer film resulted in an increase in device brightness, which reached 8192 cd/m2 and in external quantum efficiency, which became 1.27 cd/A at 7 V with a lower turn-on voltage. The results indicate that CdSe(ZnS) quantum dots improved significantly the emission of the devices by modifying the injection and transport of the charge carriers. We suggest a non-uniform dispersion of QDs in the co-polymer layer with carrier blocking process by the particles, which produced a balanced charge distribution inside the co-polymer, and thus increased the emission efficiency.

原文English
頁(從 - 到)307-311
頁數5
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
147
發行號2-3
DOIs
出版狀態Published - 15 二月 2008

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