Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs

Albert Chin*, C. C. Liao, J. Chu, S. S. Li

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (3 1 1)A GaAs. The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical dark I-V characteristic at all the measured temperatures from 40 to 120 K. The strained p-type AlGaAs/InGaAs QWIP exhibits a slightly asymmetrical dark I-V characteristic, but is markedly less asymmetrical than that doped with beryllium. The slight asymmetry in dark I-V characteristic and the large blue-shift in responsivity spectra may be due to the thickness modulation observed from TEM and the red-shift of PL peak energy, where PL peak energies from (3 1 1)A AlGaAs/InGaAs multiple quantum wells are red-shifts of 7 and 22 meV to the side-by-side grown (1 0 0).

原文English
頁(從 - 到)999-1003
頁數5
期刊Journal of Crystal Growth
175-176
發行號PART 2
DOIs
出版狀態Published - 1 一月 1997

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