Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique

Ta-Hui Wang*, Tse En Chang, Lu Ping Chiang, Chih Hung Wang, Nian Kai Zous, Chimoon Huang

*Corresponding author for this work

研究成果: Article同行評審

49 引文 斯高帕斯(Scopus)

摘要

We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrapping characteristics can be obtained. An analytical model accounting for the time-dependence of an oxide charge detrapping induced GIDL current transient was derived. A specially designed measurement consisting of oxide trap creation, oxide trap filling with electrons or holes and oxide charge detrapping was performed. Two hot carrier stress methods, channel hot electron injection and bandto-band tunneling induced hot hole injection, were employed in this work. Both electron detrapping and hole detrapping induced GIDL current transients were observed in the same device. The time-dependence of the transients indicates that oxide charge detrapping is mainly achieved via field enhanced tunneling. In addition, we used this technique to characterize oxide trap growth in the two hot carrier stress conditions. The result reveals that the hot hole stress is about 104 times more efficient in trap generation than the hot electron stress in terms of injected charge.

原文English
頁(從 - 到)1511-1517
頁數7
期刊IEEE Transactions on Electron Devices
45
發行號7
DOIs
出版狀態Published - 1 十二月 1998

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