Investigation of nonvolatile memory effect of organic thin-film transistors with triple dielectric layers

Hsin-Chieh Yu, Ying Chih Chen, Chun Yuan Huang, Yan Kuin Su*

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Pentacene thin-film transistor (TFT) memory using poly(2-hydroxyethyl methacrylate) (PHEMA)-based polymer dielectric layers has been developed. The electric performance and memory behaviors of memory TFTs can be significantly improved by using triple polymer dielectric layers consisting of PHEMA/poly(methyl methacrylate) (PMMA)/PHEMA. This can be attributed to the improvement of the channel/dielectric interface. This memory effect is due to the charge storage of the dipolar group or molecules in the dielectric. The devices exhibit a wide memory window (ΔV th, >20 V), switchable channel current, and long retention time.

原文English
文章編號034101
期刊Applied Physics Express
5
發行號3
DOIs
出版狀態Published - 1 三月 2012

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