Investigation of multi-Vth efficiency for trigate GeOI p-MOSFETs using analytical solution of 3-D poisson's equation

Shu Hua Wu, Chang Hung Yu, Chun Hsien Chiang, Pin Su*

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper provides an analytical subthreshold model for trigate MOSFETs with thin buried oxide (BOX) for multithreshold (multi-Vth}) applications. This model shows a fairly good scalability in substrate bias and BOX thickness, which is crucial to the prediction of multi-Vth modulation through BOX. In addition, we demonstrate the application of our model in multi-Vth} device design for trigate GeOI p-MOSFETs with the body-effect coefficient (γ) over a wide range of design space efficiently examined. We have shown an enhanced multi-Vthmodulation behavior in trigate GeOI p-MOSFETs. Our study indicates that, for a given subthreshold swing and γ , the GeOI trigate p-MOSFET can possess a higher fin aspect ratio than the SOI counterpart.

原文English
文章編號6982209
頁(從 - 到)88-93
頁數6
期刊IEEE Transactions on Electron Devices
62
發行號1
DOIs
出版狀態Published - 1 一月 2015

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