Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III-V-on-insulator n-MOSFETs

Chang Hung Yu, Pin Su

研究成果: Conference contribution同行評審

摘要

The intrinsic drain-induced-barrier-lowering (DIBL) characteristics of ultra-thin-body (UTB) MOSFETs with various III-V channel materials (such as GaAs, In0.53Ga0.47As, In0.7Ga0.3As, InAs, In0.2Ga0.8Sb, InSb, etc.) has been investigated and benchmarked with the Si device. Our results indicate that the DIBL of the III-V-on-insulator devices can be worse than what permittivity predicts. The underlying mechanism is proposed. We also show that, with the aid of quantum confinement (along the channel-thickness direction), the DIBL of the III-V devices can be comparable to the Si device.

原文English
主出版物標題IEEE-NANO 2015 - 15th International Conference on Nanotechnology
發行者Institute of Electrical and Electronics Engineers Inc.
頁面666-669
頁數4
ISBN(電子)9781467381550
DOIs
出版狀態Published - 1 一月 2015
事件15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
持續時間: 27 七月 201530 七月 2015

出版系列

名字IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
國家Italy
城市Rome
期間27/07/1530/07/15

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