Introduction of new materials into CMOS devices

Hiroshi Iwai*

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

With the progress of recent smart society, demand for high performance low-power CMOS devices becomes stronger and stronger. Corresponding to the situation, the downsizing of CMOS device has been accelerated significantly. In order to solve the problem inherent in the downsizing, new structures and new materials are being aggressively introduced into MOSFETs. They are, for example, nanowire channel, metal/high-k gate stack, metal/silicide source/drain. In this paper, the status of the new material introduction to CMOS devices is described.

原文English
主出版物標題High Purity Silicon 12
頁面13-20
頁數8
版本5
DOIs
出版狀態Published - 2012
事件12th High Purity Silicon Symposium - 222nd ECS Meeting - Honolulu, HI, United States
持續時間: 7 十月 201211 十月 2012

出版系列

名字ECS Transactions
號碼5
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference12th High Purity Silicon Symposium - 222nd ECS Meeting
國家United States
城市Honolulu, HI
期間7/10/1211/10/12

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