Internal structure and electrical properties of Ge quantum dot in single-electron transistors

K. H. Chen, I. H. Chen, Pei-Wen Li

研究成果: Conference contribution同行評審

摘要

We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.

原文English
主出版物標題2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
出版狀態Published - 22 十月 2010
事件2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
持續時間: 13 六月 201014 六月 2010

出版系列

名字2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
國家United States
城市Honolulu, HI
期間13/06/1014/06/10

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