Interface Characterization of HfO2/GaSb MOS Capacitors with Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

Ming Li Tsai, Jun Yu Ko, Shin Yuan Wang, Chao-Hsin Chien

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We investigate p-type GaSb MOS capacitors with various HfO2 thicknesses grown using an atomic layer deposition. GaSb surfaces treated with ex-situ chemical solution and in situ remote hydrogen plasma are inspected. After a series of etching steps, the GaSb surfaces exhibit smooth topography, indicating that this combination of treatments is capable of realizing ultrathin dielectric deposition. After etching processes, the ultrathin (approximately 3 nm) HfO2 layer deposited successfully on GaSb exhibit high-permittivity (approximately 21) properties as well as equivalent oxide thickness (EOT) of 0.75 nm, which can be attributed to the flat surface. To the best of our knowledge, the EOT of GaSb capacitor prepared using the exploited approach is record low. Furthermore, we find that the interlayer present after hydrogen plasma treatment and forming gas annealing could efficiently passivate interface state density and achieve high C-V modulation. Compared with the benchmark of gate leakage current versus EOT, the electrical performance with low gate leakage current of the GaSb MOS capacitors demonstrates the high feasibility of the proposed treatments.

原文English
文章編號7515183
頁(從 - 到)3459-3465
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號9
DOIs
出版狀態Published - 1 九月 2016

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