Injection-locked GaInP/GaAs HBT frequency divider with stacked transformers

Hung Ju Wei, Chin-Chun Meng*, Yuwen Chang, Guo-Wei Huang

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mW, the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 × 1.0 mm2.

原文English
頁(從 - 到)2602-2605
頁數4
期刊Microwave and Optical Technology Letters
49
發行號10
DOIs
出版狀態Published - 1 十月 2007

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