InGaN LEDs grown on patterned sapphire substrates with modified top-tip cone shapes

Hsu Hung Hsueh, Sin Liang Ou, Chiao Yang Cheng, Dong Sing Wuu, Ray-Hua Horng

研究成果: Conference contribution同行評審

摘要

The GaN-based light emitting diodes (LEDs) were grown on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To enhance the epilayer quality and optoelectronic performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. After the wet etching process, some dry-etched induced damage on sapphire surface generated in the PSS fabrication process could be removed, leading to a higher crystal quality in epilayer and better device performance. As the wet etching time was increased to 3 min, the LED grown on the cone-shaped PSS had 53% and 8% improvement in light output (@ 20 mA) compared to that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively. It indicates that the technique of the modification in PSS shape has a high potential in LEDs application.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 14
頁面101-106
頁數6
版本2
DOIs
出版狀態Published - 21 十月 2013
事件Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
持續時間: 12 五月 201316 五月 2013

出版系列

名字ECS Transactions
號碼2
53
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
國家Canada
城市Toronto, ON
期間12/05/1316/05/13

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