InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm

J. Y. Huang, H. C. Liang, Kuan-Wei Su, H. C. Lai, Yung-Fu Chen*, Kai-Feng Huang

*Corresponding author for this work

研究成果: Article

20 引文 斯高帕斯(Scopus)

摘要

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

原文English
頁(從 - 到)239-242
頁數4
期刊Applied Optics
46
發行號2
DOIs
出版狀態Published - 10 一月 2007

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