InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

Shin Yuan Wang, Chao-Hsin Chien, Jin Ju Lin, Chun Yen Chang

研究成果: Conference contribution同行評審

摘要

N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (Rsd) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm 2 /V-s and the interface state density (Dit) was about 10 12 cm -2 eV -1 at Et = Ev + 0.6 eV by using full-conductance method.

原文English
主出版物標題Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面415-418
頁數4
ISBN(電子)9781479999286, 9781479999286
DOIs
出版狀態Published - 25 八月 2015
事件22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
持續時間: 29 六月 20152 七月 2015

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
國家Taiwan
城市Hsinchu
期間29/06/152/07/15

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