InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal, J. P. Duarte, N. Paydavosi, Y. S. Chauhan, J. J. Gu, M. Si, P. D. Ye, Chen-Ming Hu

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

原文English
主出版物標題Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
發行者Nano Science and Technology Institute
頁面475-478
頁數4
ISBN(列印)9781482258271
出版狀態Published - 1 一月 2014
事件Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
持續時間: 15 六月 201418 六月 2014

出版系列

名字Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
2

Conference

ConferenceNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
國家United States
城市Washington, DC
期間15/06/1418/06/14

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