Influence of Ta content on the physical properties of SrBi 2 Ta 2 O 9 ferroelectric thin films

Fan Yi Hsu, Ching Chich Leu, Chao-Hsin Chien, Chen Ti Hu*

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2E c - 87 kV/cm) and a high remanent polarization (2P r - 15 μC/cm 2 ). The value of 2P r decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

原文English
頁(從 - 到)3124-3133
頁數10
期刊Journal of Materials Research
21
發行號12
DOIs
出版狀態Published - 1 十二月 2006

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