Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs

Shih Hung Chen; Yueh Chin Lin; Dimitri Linten; Mirko Scholz; Geert Hellings; Edward Yi Chang; Guido Groeseneken

doi:10.1109/LED.2012.2204951

Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs

Shih Hung Chen^*, Yueh Chin Lin, Dimitri Linten, Mirko Scholz, Geert Hellings, Edward Yi Chang, Guido Groeseneken

^*Corresponding author for this work

材料科學與工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.

原文	English
文章編號	6248673
頁（從 - 到）	1252-1254
頁數	3
期刊	IEEE Electron Device Letters
卷	33
發行號	9
DOIs	https://doi.org/10.1109/LED.2012.2204951
出版狀態	Published - 1 八月 2012

存取文件

10.1109/LED.2012.2204951

Link to publication in Scopus

指紋深入研究「Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs」主題。共同形成了獨特的指紋。

引用此

@article{40cee049478943958954a2c4b5fe64b4,

title = "Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs",

abstract = "GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.",

keywords = "Electrostatic discharge (ESD), GaAs pseudomorphic high-electron-mobility transistor (pHEMT), InGaP Schottky layer, transmission-line pulsing (TLP) systems",

author = "Chen, {Shih Hung} and Lin, {Yueh Chin} and Dimitri Linten and Mirko Scholz and Geert Hellings and Chang, {Edward Yi} and Guido Groeseneken",

year = "2012",

month = aug,

day = "1",

doi = "10.1109/LED.2012.2204951",

language = "English",

volume = "33",

pages = "1252--1254",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs

AU - Chen, Shih Hung

AU - Lin, Yueh Chin

AU - Linten, Dimitri

AU - Scholz, Mirko

AU - Hellings, Geert

AU - Chang, Edward Yi

AU - Groeseneken, Guido

PY - 2012/8/1

Y1 - 2012/8/1

N2 - GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.

AB - GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.

KW - Electrostatic discharge (ESD)

KW - GaAs pseudomorphic high-electron-mobility transistor (pHEMT)

KW - InGaP Schottky layer

KW - transmission-line pulsing (TLP) systems

UR - http://www.scopus.com/inward/record.url?scp=84865412648&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2204951

DO - 10.1109/LED.2012.2204951

M3 - Article

AN - SCOPUS:84865412648

VL - 33

SP - 1252

EP - 1254

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 6248673

ER -