Influence of InGaP and AlGaAs schottky layers on ESD robustness in GaAs pHEMTs

Shih Hung Chen*, Yueh Chin Lin, Dimitri Linten, Mirko Scholz, Geert Hellings, Edward Yi Chang, Guido Groeseneken

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of the essential elements of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a better Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Although InGaP presents significant advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.

原文English
文章編號6248673
頁(從 - 到)1252-1254
頁數3
期刊IEEE Electron Device Letters
33
發行號9
DOIs
出版狀態Published - 1 八月 2012

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