Two new techniques, reverse-bias pulsed deep-level transient spectroscopy (RDLTS) and injection deep-level transient spectroscopy (IDLTS), for use in measuring electric field dependent carrier emission and capture rates, respectively, are described in detail. The Au donor center at E//V plus 0. 35 ev was studied by these two methods as an example. The results indicate that the carrier emission rate increases and that the carrier capture rate decreases in the presence of high electric field. The implication of the enhanced emission and retarded capture is discussed in terms of leakage current and premature breakdown in VLSI device application.