INFLUENCE OF HIGH ELECTRIC FIELD CAPTURE AND EMISSION OF A DEEP-LEVEL CENTER IN VLSI DEVICE STRUCTURES.

G. P. Li*, Y. Wu, Mau-Chung Chang, K. L. Wang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Two new techniques, reverse-bias pulsed deep-level transient spectroscopy (RDLTS) and injection deep-level transient spectroscopy (IDLTS), for use in measuring electric field dependent carrier emission and capture rates, respectively, are described in detail. The Au donor center at E//V plus 0. 35 ev was studied by these two methods as an example. The results indicate that the carrier emission rate increases and that the carrier capture rate decreases in the presence of high electric field. The implication of the enhanced emission and retarded capture is discussed in terms of leakage current and premature breakdown in VLSI device application.

原文English
主出版物標題Conference on Solid State Devices and Materials
發行者Business Cent for Academic Soc Japan
頁面107-110
頁數4
ISBN(列印)4930813077
DOIs
出版狀態Published - 1 十二月 1984

出版系列

名字Conference on Solid State Devices and Materials

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