Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates

Tony Ma, Daisuke Ueda, Won Seong Lee, Jim Adkisson, James S. Harris

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The influence of buffer layer thickness on the dc performance of GaAs/AlGaAs heterojunction bipolar transistors (HBT's) grown on silicon substrates by molecular beam epitaxy (MBE) was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base diode ideality factors, and breakdown voltages were measured as the buffer layer thickness was varied between 0 and 5μm. The current gain steadily increases with increasing buffer layer thickness until the layer reaches 3 μm. However, the other dc parameters are relatively insensitive to the buffer layer thickness. A small-signal current gain of 60 is typically achieved for devices with 6 x 6-μm2 emitters at a current density of 6 x 104 A/cm2 when the buffer layer is a ≥3 μm.

原文English
頁(從 - 到)657-659
頁數3
期刊IEEE Electron Device Letters
9
發行號12
DOIs
出版狀態Published - 1 一月 1988

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