Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

Wei-Kuo Chen*, J. F. Chen, Jyh-Cheng Chen, H. M. Kim, L. Anthony, C. R. Wie, P. L. Liu

*Corresponding author for this work

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

原文English
頁(從 - 到)749-751
頁數3
期刊Applied Physics Letters
55
發行號8
DOIs
出版狀態Published - 1 十二月 1989

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