InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

Edward Yi Chang*, Chien I. Kuo, Heng-Tung Hsu, Che Yang Chiang, Yasuyuki Miyamoto

*Corresponding author for this work

研究成果: Article同行評審

87 引文 斯高帕斯(Scopus)

摘要

60nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114mS/mm and a current-gain cutoff frequency (fT) of 710 GHz were achieved at VDS = 0:5 V.

原文English
文章編號034001
期刊Applied Physics Express
6
發行號3
DOIs
出版狀態Published - 1 三月 2013

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