In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories

Yu Ting Huang, Shih Ying Yu, Cheng Lun Hsin, Chun Wei Huang, Chen Fang Kang, Fu Hsuan Chu, Jui Yuan Chen, Jung Chih Hu, Lien Tai Chen, Jr Hau He, Wen-Wei Wu*

*Corresponding author for this work

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

原文English
頁(從 - 到)3955-3960
頁數6
期刊Analytical Chemistry
85
發行號8
DOIs
出版狀態Published - 16 四月 2013

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