In-situ resist temperature monitor during hot embossing lithography by fluorescence probe technique

Fu-Hsiang Ko*, Hsin Yen Hwang, Mei Fen Chen, Li Yu Weng, Chu Jung Ko, Hsuen Li Chen

*Corresponding author for this work

研究成果: Conference contribution

摘要

A fluorescence probe method was used to record the highest temperature in resist deformation processes. The fluorescence temperature measurement is a rapid, high precision, high accuracy, and a robust method. To calibrate the temperature measurement for a long heating time, the mixed resist was heated continuously up to 9 hrs. The method was found to be applicable to the in-situ temperature variation inspection on whole wafer but also helpful in investigating the resist deformation processes during embossing processes.

原文English
主出版物標題Digest of Papers - Microprocesses and Nanotechnology 2004
頁面136-137
頁數2
DOIs
出版狀態Published - 1 十二月 2004
事件2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
持續時間: 26 十月 200429 十月 2004

出版系列

名字Digest of Papers - Microprocesses and Nanotechnology 2004

Conference

Conference2004 International Microprocesses and Nanotechnology Conference
國家Japan
城市Osaka
期間26/10/0429/10/04

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  • 引用此

    Ko, F-H., Hwang, H. Y., Chen, M. F., Weng, L. Y., Ko, C. J., & Chen, H. L. (2004). In-situ resist temperature monitor during hot embossing lithography by fluorescence probe technique. 於 Digest of Papers - Microprocesses and Nanotechnology 2004 (頁 136-137). (Digest of Papers - Microprocesses and Nanotechnology 2004). https://doi.org/10.1109/IMNC.2004.245761