Improving Photoelectric Energy Conversion by structuring Si Surfaces with Ge Quantum Dots

Volodymyr Shmid, Vasyl Kuryliuk, Andriy Nadtochiy, Oleg Korotchenkov, Pei Wen Li

研究成果: Conference contribution同行評審

摘要

Structuring Si surfaces with Ge quantum dots can have a beneficial effect on the photovoltage (PV), increasing the PV magnitude and decay time. The origin of this behavior is intimately related to mechanical strains developed in the vicinity of the Ge/Si interface. The structuring is a promising means of avoiding the uncontrolled production of recombination centers and offering significant enhancement of the recombination lifetime due to carrier trapping in the dots. This work can open new opportunities for advanced photoelectric devices with recombination center free nanostructures.

原文English
主出版物標題2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面92-96
頁數5
ISBN(電子)9781728120652
DOIs
出版狀態Published - 四月 2019
事件39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ukraine
持續時間: 16 四月 201918 四月 2019

出版系列

名字2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conference

Conference39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
國家Ukraine
城市Kyiv
期間16/04/1918/04/19

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