Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Hua Mao Chen, Ting Chang Chang*, Ya-Hsiang Tai, Kuan Fu Chen, Hsiao Cheng Chiang, Kuan Hsien Liu, Chao Kuei Lee, Wei Ting Lin, Chun Cheng Cheng, Chun Hao Tu, Chu Yu Liu

*Corresponding author for this work

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiNx at low process/deposition temperature is better than that of SiOx at similarly low process/deposition temperature, there is still a very large positive threshold voltage (Vth) shift of 9.4 V for devices with a single low-temperature SiNx gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a Vth shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior.

原文English
頁(從 - 到)176-180
頁數5
期刊Thin Solid Films
595
DOIs
出版狀態Published - 1 十一月 2015

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    Chen, H. M., Chang, T. C., Tai, Y-H., Chen, K. F., Chiang, H. C., Liu, K. H., Lee, C. K., Lin, W. T., Cheng, C. C., Tu, C. H., & Liu, C. Y. (2015). Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications. Thin Solid Films, 595, 176-180. https://doi.org/10.1016/j.tsf.2015.10.038