Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period

Shirota Riichiro, B. J. Yang, Y. Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

It has been newly found that shorter intervals between program and erase operations can suppress the oxide degradation more significantly in a 0.05 to 5 sec timeframe. Our new analysis clearly demonstrates the following degradation phenomena: a longer interval yields more trapped charges near the Si surface and surface states. Our results also indicate that the oxide degradation occurs more significantly during the erase-to-program interval than in the program-to-erase interval. These findings suggest that the erasing step causes a self-induced positive FG potential yields an accumulation of trapped holes near the Si surface and also generates surface states during the interval from erase-to-program. In addition, regarding retention characteristics, larger Vt shifts caused by the reduction of surface states and electron detrapping of oxide charges are observed in the longer interval. Based on these results, a new NAND operation scheme is proposed to improve reliability in shorter intervals.

原文English
主出版物標題2015 IEEE International Reliability Physics Symposium, IRPS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面MY121-MY125
ISBN(電子)9781467373623
DOIs
出版狀態Published - 26 五月 2015
事件IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
持續時間: 19 四月 201523 四月 2015

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2015-May
ISSN(列印)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
國家United States
城市Monterey
期間19/04/1523/04/15

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