Improvement of interface properties of W/La2O3/Si MOS structure using Al capping layer

K. Tachi*, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

Electrical characteristics of W/La2O3/Si MOS capacitors have been investigated under various annealing condition. Relatively high interface state densities (Dit,) of 1012 cm -2eV-1 observed after annealing at 200 to 500 °C was effectively reduced down to 1011 cm-2eV-1 by using an Al capping layer in the annealing process. However, a trade off between high capacitance density and low Dit, has been observed in this method

原文English
主出版物標題ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
頁面191-198
頁數8
版本4
DOIs
出版狀態Published - 2007
事件5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
持續時間: 8 十月 200710 十月 2007

出版系列

名字ECS Transactions
號碼4
11
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
國家United States
城市Washington, DC
期間8/10/0710/10/07

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