Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

Ta Shan Chang, Ting Chang Chang, Po-Tsun Liu, Tien Shan Chang, Chun Hao Tu, Feng Sheng Yeh

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/V · s and a subthreshold swing of 0.68 V.

原文English
頁(從 - 到)902-904
頁數3
期刊IEEE Electron Device Letters
27
發行號11
DOIs
出版狀態Published - 1 十一月 2006

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