We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.
|頁（從 - 到）||221-226|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 16 八月 2004|
|事件||Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States|
持續時間: 28 一月 2004 → 29 一月 2004