Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang, Hao-Chung Kuo, F. I. Lai, Y. A. Chang, L. H. Laih, S. C. Wang*

*Corresponding author for this work

研究成果: Conference article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ∼0.4 mA, and slope efficiencies ∼ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ∼30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

原文English
頁(從 - 到)221-226
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
5364
DOIs
出版狀態Published - 16 八月 2004
事件Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States
持續時間: 28 一月 200429 一月 2004

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