Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba0.7Sr0.3TiO3 insulator layer

Tseung-Yuen Tseng*, S. Y. Lee

*Corresponding author for this work

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba07Sr03TiO3 insulator layer was discussed. The films were deposited by metalorganic decomposition method. The ratio of remanent polarization to saturation polarization was also investigated. A large memory window of 3.1 V was obtained.

原文American English
頁(從 - 到)981-983
頁數3
期刊Applied Physics Letters
83
發行號5
DOIs
出版狀態Published - 4 八月 2003

指紋 深入研究「Improvement in retention time of metal-ferroelectric-metal-insulator-semiconductor structures using MgO doped Ba<sub>0.7</sub>Sr<sub>0.3</sub>TiO<sub>3</sub> insulator layer」主題。共同形成了獨特的指紋。

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