Improved ultrathin gate oxide integrity in p+-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p+ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (approximately 1×1014 cm-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.

原文English
頁(從 - 到)290-292
頁數3
期刊Electrochemical and Solid-State Letters
3
發行號6
DOIs
出版狀態Published - 1 六月 2000

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