Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon*, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto Dos Reis, Chen-Ming Hu, Sayeef Salahuddin

*Corresponding author for this work

研究成果: Article同行評審

73 引文 斯高帕斯(Scopus)

摘要

Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

原文English
文章編號8239602
頁(從 - 到)300-303
頁數4
期刊IEEE Electron Device Letters
39
發行號2
DOIs
出版狀態Published - 1 二月 2018

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