Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

Chun Yang Huang, Jheng Hong Jieng, Wen Yueh Jang, Chen Hsi Lin, Tseung-Yuen Tseng

研究成果: Article

17 引文 斯高帕斯(Scopus)

摘要

A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO 2 devices. In addition, the crystallization temperature of HfO 2 based RRAM devices can also be improved by insetting Al 2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al 2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure.

原文English
期刊ECS Solid State Letters
2
發行號8
DOIs
出版狀態Published - 26 七月 2013

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