Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation

C. C. Chen*, Horng-Chih Lin, C. Y. Chang, C. C. Huang, Chao-Hsin Chien, T. H. Huang, M. S. Liang

*Corresponding author for this work

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

The effects of fluorine and nitrogen incorporation on ultra-thin gate oxide integrity (GOI) were investigated by implanting fluorine and nitrogen into poly gate or Si substrate. It is observed that fluorine and nitrogen implantation into Si substrate prior to oxidation can be used to obtain multiple oxide thickness, albeit its effectiveness is drastically reduced for N 2 O-nitrided oxide. Gate leakage measurements performed on antenna devices show that charging damage can be significantly reduced for fluorine- or nitrogen-implanted devices with O 2 oxide. On the other hand, fluorine-alone implant is useful to reduce the gate leakage of antenna devices with N 2 O oxide. Finally, improved CMOS GOI, even for p-channel devices, is actually achieved for the first time with medium-dose fluorine implantation, without causing noticeably worsened boron penetration.

原文English
頁面121-124
頁數4
DOIs
出版狀態Published - 1 十二月 2000
事件5th International Symposium on Plasma Process-Induced Damage - Santa Clara, CA, USA
持續時間: 23 五月 200024 五月 2000

Conference

Conference5th International Symposium on Plasma Process-Induced Damage
城市Santa Clara, CA, USA
期間23/05/0024/05/00

指紋 深入研究「Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation」主題。共同形成了獨特的指紋。

引用此