Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

Bo Chun Chen, Chun Yen Chang, Yi Keng Fu, Kai-Feng Huang, Yu Hsuan Lu, Yan Kuin Su

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.

原文English
頁(從 - 到)1682-1684
頁數3
期刊IEEE Photonics Technology Letters
23
發行號22
DOIs
出版狀態Published - 1 一月 2011

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