Improved low temperature characteristics of p-channel MOSFETs with Si 1-xGe x raised source and drain

Hsiang Jen Huang*, Kun Ming Chen, Tiao Yuan Huang, Tien-Sheng Chao, Guo Wei Huang, Chao-Hsin Chien, Chun Yen Chang

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

P-channel metal-oxide semiconductor field-effect transistors with Si 1-xGe x raised source and drain (RSD) have been fabricated and further studied for low temperature applications. The Si 1-xGe x RSD layer was selectively grown by ANELVA SRE-612 ultra-high vacuum chemical vapor deposition (UHVCVD) system. Compared to devices with conventional Si RSD, improved transconductance and specific contact resistance were obtained, and these improvements become even more dramatic with reducing channel length. Well-behaved short channel characteristics with reduced drain-induced barrier lowering (DIBL) and off-state leakage current are demonstrated on devices with 100 nm Si 1-xGe x RSD, due to the resultant shallow junction and less implantation damage. Moreover, temperature measurements reveal that Si 1-xGe x RSD devices show more dramatic improvement in device performance at low temperature (-50°C) operation, which can be ascribed to the higher temperature sensitivity of the Si 1-xGe x sheet resistance.

原文English
文章編號936576
頁(從 - 到)1627-1632
頁數6
期刊IEEE Transactions on Electron Devices
48
發行號8
DOIs
出版狀態Published - 1 八月 2001

指紋 深入研究「Improved low temperature characteristics of p-channel MOSFETs with Si <sub>1-x</sub>Ge <sub>x</sub> raised source and drain」主題。共同形成了獨特的指紋。

引用此