Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

Chih Pang Chang*, Yew-Chuhg Wu

*Corresponding author for this work

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.

原文English
頁(從 - 到)990-992
頁數3
期刊IEEE Electron Device Letters
28
發行號11
DOIs
出版狀態Published - 1 十一月 2007

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