Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique

Chung-Yong Tsai, K. C. Chiang, S. H. Lin, K. C. Hsu, C. C. Chi, Albert Chin

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

We have fabricated high-κNi/ZrO2/TiN metalinsulatormetal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6×10-7Acm2, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

原文English
文章編號5482029
頁(從 - 到)749-751
頁數3
期刊IEEE Electron Device Letters
31
發行號7
DOIs
出版狀態Published - 1 七月 2010

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