Implementation of RF power MOS in 0.18μm CMOS technology for single chip solution

Heng Ming Hsu*, Chih Wei Chen, Jiong Guang Su, Ta Hsun Yeh, Jason Chih Hsien Lin, Jack Yuan Chen Sun, Chun Hsiung Chen

*Corresponding author for this work

研究成果: Conference article

摘要

This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18μm CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification testing is also included.

原文English
頁(從 - 到)1027-1030
頁數4
期刊IEEE MTT-S International Microwave Symposium Digest
2
DOIs
出版狀態Published - 2 六月 2002
事件IEEE MSS-S International Microwave Symposium Digest - Seattle, WA, United States
持續時間: 2 六月 20027 六月 2002

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