Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao*, Min Chen Lin, Shao Xuan Liu, Tien-Sheng Chao

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

原文English
文章編號6101550
頁(從 - 到)239-241
頁數3
期刊IEEE Electron Device Letters
33
發行號2
DOIs
出版狀態Published - 1 二月 2012

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