Impacts of precursor flow rate and temperature of PEC VD-SiN capping films on strained-channel NMOSFETs

Ching Sen Lu, Horng-Chih Lin, Yao Jen Lee, Tiao Yuan Huang

研究成果: Conference contribution

原文English
主出版物標題2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
出版狀態Published - 1 十二月 2007
事件2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
持續時間: 12 十二月 200714 十二月 2007

出版系列

名字2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference2007 International Semiconductor Device Research Symposium, ISDRS
國家United States
城市College Park, MD
期間12/12/0714/12/07

引用此

Lu, C. S., Lin, H-C., Lee, Y. J., & Huang, T. Y. (2007). Impacts of precursor flow rate and temperature of PEC VD-SiN capping films on strained-channel NMOSFETs. 於 2007 International Semiconductor Device Research Symposium, ISDRS [4422400] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422400