Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Horng-Chih Lin, D. Y. Lee, S. C. Ou, Chao-Hsin Chien, T. Y. Huang

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

原文English
主出版物標題Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
發行者Institute of Electrical and Electronics Engineers Inc.
頁面76-79
頁數4
ISBN(電子)4891140372, 9784891140373
DOIs
出版狀態Published - 1 一月 2003
事件International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
持續時間: 6 十一月 20037 十一月 2003

出版系列

名字Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2003
國家Japan
城市Tokyo
期間6/11/037/11/03

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