Impacts of gap thickness scaling on thin-film transistors with suspended nanowire channels

Chia Hao Kuo*, Chia Wei Hsu, Hsing Hui Hsu, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

For the past years, MEMS-based devices such as Suspended Gate Metal-Oxide-Semiconductor Field-Effect Transistor (sg-mosfet) [1] and air-gap poly Si Thin-Film Transistors (TFTs) [2] have received considerable attention because of their abrupt switching characteristics which is attractive for solving the non-scalable subthreshold swing (ss) of traditional MOSFETs. Although some simulation results showed that the pull-in voltage, which can be regarded as the threshold voltage of mosfet, could be reduced directly by shrinking the air-gap thickness [35], however, difficulty in etching arises because of extremely high aspect ratio of the air gap structure as the gap thickness is scaled down.

原文English
主出版物標題Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
頁面24-25
頁數2
DOIs
出版狀態Published - 11 七月 2011
事件2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
持續時間: 25 四月 201127 四月 2011

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
國家Taiwan
城市Hsinchu
期間25/04/1127/04/11

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