Impact of thin La2O3 insertion for HfO2 MOSFET

K. Kakushima*, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

*Corresponding author for this work

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.

原文English
主出版物標題ECS Transactions - Dielectrics for Nanosystems 3
主出版物子標題Materials Science, Processing, Reliability, and Manufacturing
頁面29-37
頁數9
版本2
DOIs
出版狀態Published - 2008
事件3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
持續時間: 18 五月 200822 五月 2008

出版系列

名字ECS Transactions
號碼2
13
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
國家United States
城市Phoenix, AZ
期間18/05/0822/05/08

指紋 深入研究「Impact of thin La<sub>2</sub>O<sub>3</sub> insertion for HfO<sub>2</sub> MOSFET」主題。共同形成了獨特的指紋。

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