The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.
|主出版物標題||ECS Transactions - Dielectrics for Nanosystems 3|
|主出版物子標題||Materials Science, Processing, Reliability, and Manufacturing|
|出版狀態||Published - 2008|
|事件||3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States|
持續時間: 18 五月 2008 → 22 五月 2008
|Conference||3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting|
|期間||18/05/08 → 22/05/08|