Impact of post deposition annealing on resistive switching in Ga2O3-based conductive-bridge RAM devices

Kai Jhih Gan, Po-Tsun Liu*, Ta Chun Chien, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We study the influence of post-deposition annealing on the electrical properties of performance of Ga2O3-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga2O3) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post- Ga2O3 deposition annealing in pure nitrogen (N2) ambient.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 五月 2018
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 7 五月 20189 五月 2018

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference7th International Symposium on Next-Generation Electronics, ISNE 2018
國家Taiwan
城市Taipei
期間7/05/189/05/18

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