Impact of plasma charging damage and diode protection on scaled thin oxide

Hyungcheol Shin*, Zhi Jian Ma, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference contribution同行評審

16 引文 斯高帕斯(Scopus)

摘要

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.

原文English
主出版物標題Technical Digest - International Electron Devices Meeting
編輯 Anon
發行者Publ by IEEE
頁面467-470
頁數4
ISBN(列印)0780314506
DOIs
出版狀態Published - 1 十二月 1993
事件Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
持續時間: 5 十二月 19938 十二月 1993

出版系列

名字Technical Digest - International Electron Devices Meeting
ISSN(列印)0163-1918

Conference

ConferenceProceedings of the 1993 IEEE International Electron Devices Meeting
城市Washington, DC, USA
期間5/12/938/12/93

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