Impact of channel doping on the device and NBTI performance in FinFETs for low power applications

Angada B. Sachid, Chen-Ming Hu

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.

原文English
主出版物標題Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
發行者IEEE Computer Society
ISBN(列印)9781479922178
DOIs
出版狀態Published - 1 一月 2014
事件2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
持續時間: 28 四月 201430 四月 2014

出版系列

名字Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
國家Taiwan
城市Hsinchu
期間28/04/1430/04/14

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