Impact of channel dangling bonds on reliability characteristics of Flash memory on poly-Si thin films

Yu Hsien Lin*, Chao-Hsin Chien, Tung Huan Chou, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this letter, we fabricated the polySi-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their reliability characteristics in the aspects of charge storage, drain disturbance, and gate disturbance. Employing a powerful defect passivation technique, i.e., NH 3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved. Even so, the hydrogenated polycrystalline-silicon thin-film transistors (poly-Si-TFTs) still suffered from serious drain and gate disturbances, which exhibited behaviors that are quite specific and undoubtedly distinct from those observed in the conventional SONOS-type memories on single crystalline substrates.

原文English
頁(從 - 到)267-269
頁數3
期刊IEEE Electron Device Letters
28
發行號4
DOIs
出版狀態Published - 1 四月 2007

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