Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices

Kai Chi Chuang*, Hao Tung Chung, Chi Yan Chu, Jun Dao Luo, Wei Shuo Li, Yi Shao Li, Huang-Chung Cheng

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

An AlOx layer was deposited on HfOx, and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlOx (1 nm)/HfOx (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (VForming) of 2.08 V, set voltage (VSet) of 1.96 V, and reset voltage (VReset) of %1.02 V, than the device with TiN/Ti/HfOx (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlOx layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

原文English
文章編號06KC01
期刊Japanese Journal of Applied Physics
57
發行號6
DOIs
出版狀態Published - 1 六月 2018

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