Immersion nickel deposition on blank silicon in aqueous solution containing ammonium fluoride

Xi Zhang*, Zhong Chen, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Immersion deposition of Ni on p-Si (100) blank substrates was carried out in an aqueous NiSO4 solution at a pH value of 8 through displacement reactions. Study of the early deposition stage revealed that incorporation of 2.5 M NH4F in solution promoted Ni nucleation significantly. By adding fluoride, it was observed that metallic Ni was deposited constantly at the expense of Si and the deposition was not self-limited. Sponge-like Ni deposits were observed and it might explain the non-limiting feature of such immersion Ni deposition over Si. Transmission electron microscopic images of Ni/Si cross-sections showed that during the reactions, Si oxide played a role of the intermediate phase. The whole process could have involved successive Si oxidation steps. Eventually the oxide was etched away by fluoride resulting in a nanoporous Ni film.

原文English
頁(從 - 到)4696-4701
頁數6
期刊Thin Solid Films
515
發行號11
DOIs
出版狀態Published - 9 四月 2007

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